Set of X-band distributed absorptive limiter GaAs MMICs

Author

Maas, A.P.M. ; Janssen, J. P B ; van Vliet, Frank E.

Author_Institution

TNO Defence Security & Safety, The Hague

fYear

2007

fDate

10-12 Oct. 2007

Firstpage

17

Lastpage

20

Abstract

A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active topologies have been implemented. The passive limiter design has a typical small-signal insertion loss of 1.5 dB at 10 GHz, and it can withstand (absorb) up to 4 Watts (36 dBm) of CW power without degradation or damage, while keeping the output power level below 100 mW (20 dBm). The active limiter handles up to 10 Watts of CW input power, at the cost of higher small-signal insertion loss. For all designs the input reflection remains low for any input power level. The used GaAs surface ranges from 2 to 3 mm² .

Keywords

III-V semiconductors; MMIC; gallium arsenide; microwave limiters; GaAs; MMIC; PP50-10 process; PPH25x foundry process; X-band distributed absorptive limiter; active limiter; active topologies; frequency 10 GHz; passive limiter; passive topologies; small-signal insertion loss; Costs; Degradation; Foundries; Gallium arsenide; Insertion loss; MMICs; Power generation; Pulse measurements; Reflection; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference, 2007. EuRAD 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-004-0

Type

conf

DOI

10.1109/EURAD.2007.4404925

Filename

4404925