Title :
Long-wavelength metamorphic InGaAs detectors on GaAs substrates
Author :
Adesida, I. ; Jang, J.H. ; Bae, J.W. ; Kim, S. ; Hoke, W.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
In this paper we present the properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical fabrication; photodetectors; GaAs substrates; InGaAs-GaAs; leakage current; long-wavelength metamorphic InGaAs photodetectors; metamorphic materials properties; photodiodes fabrication process; Bandwidth; Buffer layers; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Lattices; Photodiodes; Photonic band gap; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253103
