DocumentCode
2402475
Title
Normal incidence InAs/ InGaAs quantum dots-in-a-well photodetector spanning the 8-12 μm atmospheric window
Author
Raghavan, Srinath ; Forman, Darren ; Hill, Peter ; Von Winckel, Gregory ; Stintz, Andreas ; Krishna, Sanjay
Author_Institution
ECE Dept., New Mexico Univ., Albuquerque, NM, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
921
Abstract
In this paper, we report the growth and characterization of a DWELL detector, operating in the 8-12 μm atmospheric window.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; infrared spectra; photodetectors; semiconductor quantum dots; semiconductor quantum wells; 8 to 12 micron; DWELL detector characterization; InAs-InGaAs; InAs-InGaAs quantum dots-in-a-well photodetector growth; atmospheric window spanning; photoluminescence; Atmospheric measurements; Atmospheric waves; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253104
Filename
1253104
Link To Document