Evaluative analysis of 2- and 3-level DC/DC converters for high-voltage high-power applications

Author

Vinnikov, Dmitri ; Egorov, Mikhail ; Strzelecki, Ryszard

Author_Institution

Tallinn Univ. of Technol., Tallinn, Estonia

fYear

2009

fDate

20-22 May 2009

Firstpage

432

Lastpage

437

Abstract

This paper is focused on the high-voltage (ges2 kV) high-power (ges20 kW) isolated DC/DC converters. The 3.3 kV IGBT based three-level half-bridge inverter topology was analyzed as an alternative to the two-level half-bridge with 6.5 kV IGBTs. The properties of primary switches, theirs selection procedure as well as inverter loss distribution, design challenges, costs of semiconductors and passive components of both concurrent topologies were evaluated and compared. The overall feasibility of two- and three-level inverter topologies was compared for the selected application and final recommendations are given.

Keywords

DC-DC power convertors; bridge circuits; insulated gate bipolar transistors; invertors; 2-DC-DC converter; 3-level DC-DC converter; IGBT based three-level half-bridge inverter topology; evaluative analysis; primary switches; voltage 3.3 kV; Capacitors; Circuit topology; Clamps; DC-DC power converters; Insulated gate bipolar transistors; Inverters; Isolation technology; Semiconductor diodes; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compatibility and Power Electronics, 2009. CPE '09.

Conference_Location

Badajoz

Print_ISBN

978-1-4244-2855-7

Electronic_ISBN

978-1-4244-2856-4

Type

conf

DOI

10.1109/CPE.2009.5156073

Filename

5156073