Title :
Evaluative analysis of 2- and 3-level DC/DC converters for high-voltage high-power applications
Author :
Vinnikov, Dmitri ; Egorov, Mikhail ; Strzelecki, Ryszard
Author_Institution :
Tallinn Univ. of Technol., Tallinn, Estonia
Abstract :
This paper is focused on the high-voltage (ges2 kV) high-power (ges20 kW) isolated DC/DC converters. The 3.3 kV IGBT based three-level half-bridge inverter topology was analyzed as an alternative to the two-level half-bridge with 6.5 kV IGBTs. The properties of primary switches, theirs selection procedure as well as inverter loss distribution, design challenges, costs of semiconductors and passive components of both concurrent topologies were evaluated and compared. The overall feasibility of two- and three-level inverter topologies was compared for the selected application and final recommendations are given.
Keywords :
DC-DC power convertors; bridge circuits; insulated gate bipolar transistors; invertors; 2-DC-DC converter; 3-level DC-DC converter; IGBT based three-level half-bridge inverter topology; evaluative analysis; primary switches; voltage 3.3 kV; Capacitors; Circuit topology; Clamps; DC-DC power converters; Insulated gate bipolar transistors; Inverters; Isolation technology; Semiconductor diodes; Switches; Voltage;
Conference_Titel :
Compatibility and Power Electronics, 2009. CPE '09.
Conference_Location :
Badajoz
Print_ISBN :
978-1-4244-2855-7
Electronic_ISBN :
978-1-4244-2856-4
DOI :
10.1109/CPE.2009.5156073
