DocumentCode
2402725
Title
Behaviour of n-MISISFET in nano-regime — TCAD simulation
Author
Chaudhary, T. ; Khanna, Gargi ; Chandel, Rajeevan
Author_Institution
Electron. & Commun., Eng. Dept., Nat. Inst. of Technol., Hamirpur, India
fYear
2012
fDate
15-17 March 2012
Firstpage
1
Lastpage
4
Abstract
A novel device n-MISISFET with a `dielectric stack´ instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with forward and reverse body biasing for the novel n-MISISFET for various substrate doping concentrations. The device is based on the principle of resonant tunneling diode (RTD).
Keywords
MOSFET; resonant tunnelling diodes; technology CAD (electronics); RTD; TCAD simulation; dielectric stack; forward body biasing; n-MISISFET; nano regime; resonant tunneling diode; reverse body biasing; substrate doping concentration; threshold voltage; Doping; Logic gates; MOSFET circuits; Substrates; Threshold voltage; Transistors; Tunneling; RTD; n-MISISFET; n-MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Processing, Computing and Control (ISPCC), 2012 IEEE International Conference on
Conference_Location
Waknaghat Solan
Print_ISBN
978-1-4673-1317-9
Type
conf
DOI
10.1109/ISPCC.2012.6224377
Filename
6224377
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