A new open-hole buried heterostructure process for the fabrication of photonic integrated circuits

Author

Sun, Y. ; Ji, X.M. ; Chen, Z. ; Yan, J.Z. ; Cai, J.X. ; Raj, M. ; Choa, F.-S.

Author_Institution

Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

1028

Abstract

We have successfully fabricated several batches of open-hole buried heterostructure (BH) lasers using self-align technique with a hole of about 3 μm opening. This new processing technology have in the active region, a traditional buried heterostructure (BH) with semiinsulating InP which works as a current block material. While in the passive region, the semiinsulating InP is the waveguide cladding material. The proposed method is very important for integrated photonic devices. Using this method we will be able to develop sophisticated photonic circuits with very good performance for future optical networking applications.

Keywords

III-V semiconductors; indium compounds; integrated optics; laser materials processing; optical design techniques; optical fabrication; optical materials; semiconductor lasers; 3 micron; InP; active region; open-hole buried heterostructure laser; open-hole buried heterostructure process; optical networking application; passive region; photonic integrated circuit fabrication; self-align technique; semiinsulating InP; waveguide cladding material; Etching; Insulation; Optical device fabrication; Optical materials; Optical waveguides; Photonic integrated circuits; Semiconductor lasers; Semiconductor materials; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253159

Filename

1253159