• DocumentCode
    2403353
  • Title

    A 25 Gb/s 400 fJ/bit silicon traveling-wave modulator

  • Author

    Ding, Ran ; Baehr-Jones, Tom ; Liu, Yang ; Ayazi, Ali ; Pinguet, Thierry ; Harris, Nick ; Streshinsky, Matt ; Lee, Poshen ; Zhang, Yi ; Lim, Andy Eu-Jin ; Liow, Tsung-Yang ; Teo, Selin Hwee-Gee ; Lo, Guo-Qiang ; Hochberg, Michael

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    We present a traveling-wave Mach-Zehnder modulator operates at 25 Gb/s with 1 Vpp. The 400 fJ/bit energy consumption is a 10× improvement over the best reported values in silicon Mach-Zehnders, becoming competitive with ring modulators.
  • Keywords
    elemental semiconductors; energy consumption; optical modulation; silicon; travelling wave tubes; Si; bit rate 25 Gbit/s; energy consumption; ring modulators; silicon traveling-wave Mach-Zehnder modulator; Junctions; Metals; Modulation; Optical waveguides; Optics; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2012 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4577-1620-1
  • Type

    conf

  • DOI
    10.1109/OIC.2012.6224411
  • Filename
    6224411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2403353