Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate

This paper presents a hybrid four-stage distributed amplifier using thin film multi-chip module deposited(MCM-D) based on selectively anodized aluminium substrate with fully embedded passives. Four bare GaAs heterojunction field effect transistors are attached on the all passive-integrated aluminium substrate and interconnected to other devices by wire-bonding. The hybrid distributed amplifier had a unity gain maximum cutoff frequency of 15 GHz, a maximum gain of 8.9 dB over 0.6 GHz to 14.2 GHz band, and a maximum gain flatness of 7.4plusmn1.5 dB over 0.6 GHz to 14.2 GHz bandwidth. The total size is 2.8 mm x 5.5 mm including the bias circuitries and bonding pads.