MMIC phase locked L-S band oscillators

Author

Smuk, J. ; Katzin, P.

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

27

Lastpage

29

Abstract

We describe the design and measured performance of GaAs MMIC phase-locked oscillators (PLOs) operating concurrently at 1.353 GHz and 2.030 GHz. All the active components, including reference oscillator, phase/frequency comparators, charge pumps, voltage controlled oscillators (VCOs) and frequency dividers, are integrated on GaAs MMICs. The packaged MMICs are attached to a duroid mother board along with a small number of discrete components, resulting in a rugged dual PLO subassembly. Single sideband phase noise at 1 kHz offset is -87 dBc/Hz and -84 dBc/Hz, respectively. Phase lock is maintained over wide variations of temperature and power supply voltage.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC oscillators; UHF oscillators; comparators (circuits); frequency dividers; gallium arsenide; integrated circuit design; integrated circuit measurement; phase locked oscillators; voltage-controlled oscillators; 1.353 GHz; 2.030 GHz; GaAs; L-band; MMIC; S-band; SSB phase noise; charge pumps; dual PLO subassembly; duroid motherboard; frequency dividers; phase-locked oscillators; phase/frequency comparators; power supply voltage; reference oscillator; voltage controlled oscillators; Charge pumps; Frequency conversion; Gallium arsenide; MMICs; Packaging; Phase measurement; Phase noise; Power supplies; Temperature; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636911

Filename

636911