Title :
MMIC phase locked L-S band oscillators
Author :
Smuk, J. ; Katzin, P.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
We describe the design and measured performance of GaAs MMIC phase-locked oscillators (PLOs) operating concurrently at 1.353 GHz and 2.030 GHz. All the active components, including reference oscillator, phase/frequency comparators, charge pumps, voltage controlled oscillators (VCOs) and frequency dividers, are integrated on GaAs MMICs. The packaged MMICs are attached to a duroid mother board along with a small number of discrete components, resulting in a rugged dual PLO subassembly. Single sideband phase noise at 1 kHz offset is -87 dBc/Hz and -84 dBc/Hz, respectively. Phase lock is maintained over wide variations of temperature and power supply voltage.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC oscillators; UHF oscillators; comparators (circuits); frequency dividers; gallium arsenide; integrated circuit design; integrated circuit measurement; phase locked oscillators; voltage-controlled oscillators; 1.353 GHz; 2.030 GHz; GaAs; L-band; MMIC; S-band; SSB phase noise; charge pumps; dual PLO subassembly; duroid motherboard; frequency dividers; phase-locked oscillators; phase/frequency comparators; power supply voltage; reference oscillator; voltage controlled oscillators; Charge pumps; Frequency conversion; Gallium arsenide; MMICs; Packaging; Phase measurement; Phase noise; Power supplies; Temperature; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636911
