DocumentCode :
2403751
Title :
A Short Term Analogue Memory
Author :
Shah, Peter
Author_Institution :
Electron. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
fYear :
1992
fDate :
21-23 Sept. 1992
Firstpage :
127
Lastpage :
130
Abstract :
A short term analogue memory is described. It is based on a well-known sample-hold topology in which leakage currents have been minimized partly by circuit design and partly by layout techniques. Measurements on a test chip implemented in a standard 2.4 micron analogue CMOS process show a droop rate of 0.075mV per second with a 1pF hold capacitor. This is equivalent to a retention time of approximately 11/4 minute with 10 bits accuracy, assuming a full scale of +/-3.5V. It is expected that this can be improved by more than an order of magnitude by improving the layout of the hold capacitor. Thus hold times of several hours should be achievable with moderate capacitance values.
Keywords :
CMOS analogue integrated circuits; analogue storage; capacitors; leakage currents; sample and hold circuits; analogue CMOS process; capacitance 1 pF; circuit design; hold capacitor; layout techniques; leakage currents; sample-hold topology; short term analogue memory; voltage 0.075 mV; word length 10 bit; Buildings; Capacitors; Circuit synthesis; Circuit topology; Diodes; Leakage current; Semiconductor device measurement; Signal processing algorithms; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1992. ESSCIRC '92. Eighteenth European
Conference_Location :
Copenhagen
Print_ISBN :
87-984232-0-7
Type :
conf
DOI :
10.1109/ESSCIRC.1992.5468400
Filename :
5468400
Link To Document :
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