DocumentCode
2403755
Title
An ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
Author
Fujii, M. ; Maeda, T. ; Ohno, Y. ; Tokushima, M. ; Ishikawa, M. ; Fukaishi, M. ; Hida, H.
Author_Institution
Microelectron. Res. Lab., NEC Corp., Ibaraki, Japan
fYear
1994
fDate
16-19 Oct. 1994
Firstpage
51
Lastpage
54
Abstract
SCFL D-FFs with supply voltage as low as 1.3 V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 /spl mu/m AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
Keywords
III-V semiconductors; JFET integrated circuits; aluminium compounds; field effect logic circuits; flip-flops; gallium arsenide; indium compounds; 0.25 micron; 1.3 V; 10 Gbit/s; 19 mW; AlGaAs-InGaAs; D-FFs; logic swing; source followers; supply voltage; ultra low power AlGaAs/InGaAs HJFET SCFL circuit; voltage shift; Capacitance; Delay effects; Energy consumption; FETs; Gallium arsenide; Indium gallium arsenide; Logic; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location
Phildelphia, PA, USA
ISSN
1064-7775
Print_ISBN
0-7803-1975-3
Type
conf
DOI
10.1109/GAAS.1994.636917
Filename
636917
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