A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique

Author

Kimura, S. ; Imai, Y. ; Umeda, Y. ; Enoki, T.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

96

Lastpage

99

Abstract

This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; compensation; distributed amplifiers; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; wideband amplifiers; 16 dB; 47 GHz; HEMT distributed baseband amplifier; InAlAs-InGaAs; broadband operation; drain artificial line; loss compensation technique; single-stage distributed amplifier IC; Bandwidth; Baseband; Broadband amplifiers; Circuits; Distributed amplifiers; Frequency; HEMTs; Impedance; Indium gallium arsenide; Optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636936

Filename

636936