Title :
A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique
Author :
Kimura, S. ; Imai, Y. ; Umeda, Y. ; Enoki, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; compensation; distributed amplifiers; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; wideband amplifiers; 16 dB; 47 GHz; HEMT distributed baseband amplifier; InAlAs-InGaAs; broadband operation; drain artificial line; loss compensation technique; single-stage distributed amplifier IC; Bandwidth; Baseband; Broadband amplifiers; Circuits; Distributed amplifiers; Frequency; HEMTs; Impedance; Indium gallium arsenide; Optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636936
