DocumentCode :
2404015
Title :
A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner
Author :
Hollmann, D. ; Heilig, R. ; Baumann, G.
Author_Institution :
Alcatel SEL, Stuttgart, Germany
fYear :
1994
fDate :
16-19 Oct. 1994
Firstpage :
100
Lastpage :
103
Abstract :
A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; gallium arsenide; millimetre wave mixers; 10 to 50 GHz; 3 dB; AlGaAs-GaAs; active LO-RF combiner; conversion gain; millimeter-wave MMIC mixer; monolithic broadband distributed HEMT mixer; Circuits; Gallium arsenide; HEMTs; MMICs; Millimeter wave measurements; Mixers; RF signals; Radio frequency; Scattering parameters; Thin film inductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-1975-3
Type :
conf
DOI :
10.1109/GAAS.1994.636938
Filename :
636938
Link To Document :
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