Title :
10 Gb/s operation of GaInAs/InP top air-clad. Lateral junction waveguide-type photodiode
Author :
Shindo, Takahiko ; Koguchi, Takayuki ; Futami, Mitsuaki ; Shinno, Keisuke ; Doi, Kyouhei ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; photodiodes; GaInAs-InP; bandwidth 8.8 GHz; bit rate 10 Gbit/s; device length; lateral junction waveguide-type photodiode; size 0.85 mum; size 380 mum; top air-clad; voltage -2 V; Distributed feedback devices; Junctions; Optical device fabrication; Optical refraction; Optical waveguides; Photodiodes; Semiconductor lasers;
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
DOI :
10.1109/OIC.2012.6224447
