DocumentCode :
2404038
Title :
Simulation for efficient Germanium VCSEL for optical interconnects
Author :
Nam, Donguk ; Sukhdeo, Devanand ; Edwards, Elizabeth ; Miller, David ; Saraswat, Krishna
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
58
Lastpage :
59
Abstract :
We proposed a VCSEL design using a highly strained germanium membrane as the gain medium. Simulations show that the lasing threshold can be reduced more than a factor of 3 with 1% tensile strain.
Keywords :
germanium; optical interconnections; surface emitting lasers; Ge; VCSEL; optical interconnects; vertical cavity surface emitting lasers; Optical reflection; Silicon; Silicon germanium; Tensile strain; Time domain analysis; Vertical cavity surface emitting lasers; FDTD; Tight-binding model; Transfer matrix method; VCSEL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
Type :
conf
DOI :
10.1109/OIC.2012.6224448
Filename :
6224448
Link To Document :
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