On-wafer HEMT characterization to 110 GHz

Author

Anholt, R. ; Pence, J. ; Godshalk, E.

Author_Institution

Gateway Modeling Inc., Minneapolis, MN, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

108

Lastpage

111

Abstract

The accuracy of W-band on-wafer S-parameter measurements and direct equivalent-circuit parameter extraction (ECP) techniques for characterizing InP lattice-matched and pHEMTs to 110 GHz is examined. The effects of transverse propagation delays on high-frequency equivalent circuits are discussed. Measurements show that as long as pad capacitances are carefully determined, frequency-independent cold- and hot-FET ECPs can be direct-extracted across the entire frequency band from 1 to 110 GHz, and the derived models can be used to reliably design amplifiers to 110 GHz.

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; microwave measurement; millimetre wave field effect transistors; millimetre wave measurement; 1 to 110 GHz; InP; W-band on-wafer S-parameter measurements; amplifier design; cold-FET ECPs; direct equivalent-circuit parameter extraction; high-frequency equivalent circuit; hot-FET ECPs; lattice-matched InP; models; pHEMTs; pad capacitances; transverse propagation delays; Capacitance; Data mining; Equivalent circuits; FETs; Frequency measurement; HEMTs; Indium phosphide; Integrated circuit modeling; PHEMTs; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636941

Filename

636941