Large-scale, computer-aided thermal design of power GaAs integrated devices and circuits

Author

Bonani, F. ; Ghione, G. ; Pirola, M. ; Naldi, C.U.

Author_Institution

Dept. of Electron., Politecnico di Torino, Italy

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

141

Lastpage

144

Abstract

A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.

Keywords

III-V semiconductors; circuit CAD; circuit analysis computing; digital simulation; gallium arsenide; heat sinks; integrated circuit design; integrated circuit metallisation; integrated circuit packaging; power integrated circuits; power semiconductor devices; GaAs; IC design; computer-aided thermal design; heat conduction; heat sinking; large-scale thermal simulation tool; nonlinear multilayered substrates; power IC; power MESFET; power semiconductor devices; surface metallization; via holes; Circuit simulation; Computational modeling; Gallium arsenide; Heat sinks; Large scale integration; Resistance heating; Substrates; Surface resistance; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636951

Filename

636951