Title :
GaAs converter IC´s for C-band DBS receivers
Author :
Miya, T. ; Yoshida, S. ; Umemoto, T. ; Satoh, K. ; Hirayama, H. ; Miyagaki, K. ; Leong, J.
Author_Institution :
Compound Semicond. Device. Div., NEC Corp., Kawasaki, Japan
Abstract :
GaAs converter IC´s for C-band DBS receivers were developed on 1.1/spl times/1.6 mm/sup 2/ chip using a 0.5 /spl mu/m MESFET process. This converter IC includes four(4) functional blocks; i.e. low noise amplifier(LNA), mixer(MIXER), oscillator(OSC) and IF amplifier(IFA). This converter IC has 2.7 dB noise figure and 43 dB conversion gain, and shows a tight gain distribution.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; microwave receivers; 0.5 micron; 2.7 dB; 43 dB; C-band DBS receivers; GaAs; GaAs converter ICs; IF amplifier; MESFET process; conversion gain; low noise amplifier; mixer; noise figure; oscillator; Circuits; FETs; Filters; Fluctuations; Gallium arsenide; Inductance; Radio frequency; Resistors; Satellite broadcasting; Threshold voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636957
