Title :
Improved quantum efficiency of GaInAsP/InP top air-clad lateral current injection lasers
Author :
Futami, Mitsuaki ; Shinno, Keisuke ; Shindo, Takahiko ; Doi, Kyohei ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
An internal quantum efficiency (ηi) of GaInAsP/InP top air-clad lateral current injection (LCI) lasers was considerably improved by covering the top surface with 50-nm thick InP cap layer. As the result, threshold current of 6.7 mA and the differential quantum efficiency of 56% were attained for five-quantum-wells (QWs) LCI laser with the cavity length of 500 μm and the stripe width of 1.5 μm.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; GaInAsP-InP; LCI laser; cap layer; cavity length; current 6.7 mA; quantum efficiency; quantum-wells; size 1.5 mum; size 50 nm; size 500 mum; threshold current; top air-clad lateral current injection lasers; Cavity resonators; Distributed feedback devices; Indium phosphide; Laser feedback; Semiconductor lasers; Threshold current;
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
DOI :
10.1109/OIC.2012.6224460
