Title :
A 1.2 W, 60% efficient power amplifier IC for commercial applications
Author :
Naber, J. ; Griffiths, J. ; Salvey, J.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
A 1.2 Watt, 6 V, 60% efficient, dual bias power amplifier GaAs IC operating in the AMPS (Advanced Mobile Phone service) band of 824 MHz to 849 MHz has been demonstrated. The IC is a two stage, class AB biased amplifier that has 24 dB of power gain. The input return loss is 12 dB over the band. The IC is packaged in a SOIC 16-pin plastic package that measures 30 mm/sup 2/.
Keywords :
III-V semiconductors; UHF integrated circuits; UHF power amplifiers; field effect analogue integrated circuits; gallium arsenide; land mobile radio; power integrated circuits; 1.2 W; 12 dB; 24 dB; 6 V; 60 percent; 824 to 849 MHz; AMPS band; Advanced Mobile Phone service; GaAs; GaAs IC; SOIC 16-pin plastic package; class AB biased amplifier; commercial applications; dual bias power amplifier; power amplifier IC; two stage amplifier; Application specific integrated circuits; Costs; FETs; Gallium arsenide; Impedance matching; Multichip modules; Plastic integrated circuit packaging; Power amplifiers; Scattering parameters; Silicon;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636961
