Conformity optimization for metal interconnections in MOS technologies

Author

Cernica, Ileana ; Dunare, Camelia ; Manea, Elena ; Ionascu, Georgeta ; Dunare, S.

Author_Institution

IMT-Bucharest, Romania

Volume

2

fYear

1998

fDate

6-10 Oct 1998

Firstpage

337

Abstract

Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO₂ and APCVD SiO₂) using α-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO₂ and APCVD SiO₂ undoped and phosphorous doped) and metallization proved by α-step, SEM and functional investigations to be an optimized solution

Keywords

MOS integrated circuits; conformal coatings; integrated circuit interconnections; α-step measurement; APCVD SiO₂; MOS technology; SEM; SiO₂; conformity optimization; contact window; metal interconnection; metallization; planarization; silicon dioxide thin film; thermal SiO₂; Artificial intelligence; Cleaning; Contacts; Dielectric measurements; Metallization; Planarization; Semiconductor films; Semiconductor thin films; Silicon compounds; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.733757

Filename

733757