Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

Author

Sun, Yongshun ; Rusli ; Yu, Mingbin ; Ruda, Harry ; Salfi, Joe ; Souza, Christina ; Singh, Navab ; Lin, Foo Kai ; Lo, Patrick ; Dim-Lee Kwong

Author_Institution

Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore

fYear

2010

fDate

14-16 Dec. 2010

Firstpage

1

Lastpage

2

Abstract

P-i-n junctions were fabricated along silicon nanowires (SiNWs) via the conventional top-down approach using optical lithography. The process is fully CMOS compactable. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has a length of 1.0 μm and a triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). Good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW is observed. The photocurrent spectral response of the SiNW p-i-n photodiodes exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO2/Si cavity.

Keywords

nanolithography; nanowires; p-i-n photodiodes; p-n junctions; photoconductivity; photolithography; rectification; silicon; silicon compounds; ultraviolet spectra; visible spectra; CMOS compactable; SiO₂-Si; electrical characteristics; local optical field enhancement; nanowires p-i-n junction; optical lithography; p-i-n photodiodes; photocurrent spectral characteristics; rectification; reverse bias; triangular cross-section; Junctions; Nanowires; Optical device fabrication; Optical sensors; PIN photodiodes; Photoconductivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2010

Conference_Location

Singapore

Print_ISBN

978-1-4244-9882-6

Type

conf

DOI

10.1109/PGC.2010.5705948

Filename

5705948