DocumentCode :
2404490
Title :
Emission capabilities of GaAs field emitter arrays fabricated using a HCl:H2O2:H2O solution
Author :
Yaradou, O. ; Ducroquet, F. ; Kropfield, P. ; Vanoverschelde, A.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d´´Ascq, France
Volume :
2
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
361
Abstract :
A HCl:H2O:H2O (40:4:1) solution shows highly isotropic features on GaAs etching. The etch rate of this mixture varies strongly with the age and temperature of the solution. For optimized etching, it was shown that these factors do not significantly affect the shape of the emitters but strongly influence the emission capabilities of the arrays
Keywords :
III-V semiconductors; electron field emission; etching; gallium arsenide; vacuum microelectronics; GaAs; GaAs field emitter array; HCl:H2O2:H2O solution; fabrication; field emission; isotropic etching; Atomic force microscopy; Field emitter arrays; Gallium arsenide; Microstructure; Rough surfaces; Surface roughness; Surface treatment; Temperature; Thickness measurement; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.733763
Filename :
733763
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2404490
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