Title :
Method for determining temperature lower limit state of the extrinsic saturation
Author :
Schiopu, Paul ; Lakatos, Eugeii ; Degeratu, Vasile
Author_Institution :
Bucharest Politehnica Univ., Romania
Abstract :
The injection of electric active impurities in a semiconductor favours the extrinsic mechanism, generating mobile carriers in the prejudice of the intrinsic mechanism and creating an unbalanced between the concentration of the conducting electrons and the holes in a semiconductor. This paper will present a computation model of temperature where the extrinsic impurities ionizate mechanism cease to supply charge carriers. The model is used to establish this temperature in the case of silicon
Keywords :
carrier density; semiconductor doping; Si; carrier concentration; carrier generation; carrier injection; computation model; donor dopant; electrical activity; extrinsic saturation; impurity ionization; semiconductor; silicon; temperature dependence; Charge carrier processes; Computational modeling; Computer aided software engineering; Electrons; Ionization; Semiconductor impurities; Silicon; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733767
