Title :
Humidity resistance of GaAs ICs
Author :
Roesch, W.J. ; Winters, R. ; Rubalcava, A.L. ; Ingle, B.
Author_Institution :
TriQuint Semicond. Inc., Beaverton, OR, USA
Abstract :
A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This not only provides evidence that GaAs devices are ready for low-cost non-hermetic packages, but that GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.
Keywords :
III-V semiconductors; environmental stress screening; gallium arsenide; humidity; integrated circuit packaging; integrated circuit reliability; life testing; moisture; monolithic integrated circuits; plastic packaging; GaAs; accelerated humidity conditions; degradation effects; environmental stress tests; humidity resistance; low-cost nonhermetic packages; moisture; plastic packages; reliability effects; Circuit testing; Gallium arsenide; Humidity; Integrated circuit packaging; Integrated circuit testing; Lead; Life testing; Moisture; Plastic packaging; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636978
