DocumentCode
2404684
Title
Three-terminal breakdown effects in power MESFETs
Author
Hanson, C. ; Hua Fu ; Golio, M.
Author_Institution
Motorola SPS, Phoenix, AZ, USA
fYear
1994
fDate
16-19 Oct. 1994
Firstpage
255
Lastpage
258
Abstract
Characterization data, theoretical developments, and the design and reliability impact of three-terminal breakdown is reported. Surface states are shown empirically to play a significant role in breakdown voltage mechanisms. It is illustrated that charge trapping phenomena can dominate the temperature coefficient of the breakdown voltage making analogies to diode characteristics invalid.
Keywords
characteristics measurement; electric breakdown; electron traps; power MESFET; semiconductor device reliability; surface states; breakdown voltage mechanisms; characterization data; charge trapping phenomena; power MESFETs; reliability impact; surface states; temperature coefficient; three-terminal breakdown effects; Breakdown voltage; Current measurement; Diodes; Electric breakdown; MESFETs; Power amplifiers; Reliability theory; Stress; Temperature control; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location
Phildelphia, PA, USA
ISSN
1064-7775
Print_ISBN
0-7803-1975-3
Type
conf
DOI
10.1109/GAAS.1994.636979
Filename
636979
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