Title :
Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition
Author :
Jin, Y.J. ; Tang, X.H. ; Chen, X.Z. ; Zhang, D.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. of Univ., Singapore, Singapore
Abstract :
High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects. Discrepancy of diffraction peak position between InSbN alloy and InSb epilayers was detected from the XRD measurement, indicating that the nitrogen has been incorporated into InSb. Photoluminescence measurement showed that the band gap of the InSbN alloy has been extended to longer wavelength by the N incorporation. Band-gap narrowing effect from the high carrier concentration has been taken into consideration to explain the difference between the band gap values from photoluminescence and photo current measurement.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; antimony compounds; antisite defects; carrier density; energy gap; indium compounds; photoconductivity; photoluminescence; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; InSb; InSbN; XRD; antisite defects; band gap; band-to-band emission; carrier concentration; epilayers; low temperature photoluminescence spectra; metal-organic chemical vapor deposition; photocurrent; Epitaxial growth; Metals; Photonic band gap; Substrates; Temperature measurement; Wavelength measurement;
Conference_Titel :
Photonics Global Conference (PGC), 2010
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-9882-6
DOI :
10.1109/PGC.2010.5705961
