DocumentCode
2404726
Title
Metallic contacts on porous silicon layers
Author
Angelescu, Anca ; Kleps, Irina
Author_Institution
Inst. of Microtechnol., Bucharest, Romania
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
447
Abstract
The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes
Keywords
Schottky diodes; elemental semiconductors; porous semiconductors; semiconductor-metal boundaries; silicon; I-V characteristics; Schottky diode; Si; electrical properties; light emission device; metallic contact; porous silicon layer; Artificial intelligence; Conducting materials; Contacts; Crystallization; Current density; Gold; Silicon; Solid state circuits; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733775
Filename
733775
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