Title :
Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
Author :
Xing-Mei Cui ; Sun Chen ; Shi-Jin Ding ; Qing-Qing Sun ; Nyberg, Timo ; Shi-Li Zhang ; Wei Zhang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (Vth), subthreshold swing, ION/IOFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, ~106, and 8.4 cm2/V·s, respectively. A positive Vth shift of 2.25 V is achieved after 1-ms programming at 10 V, whereas a negative Vth shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.
Keywords :
aluminium compounds; amorphous semiconductors; electron mobility; gallium compounds; indium compounds; platinum; self-assembly; thin film transistors; Al2O3-Pt-Al2O3; In-Ga-Zn-O TFT memory; InGaZnO; UV-erasable TFT memory; UV-erasable thin-film transistor memory; a-IGZO films; electron mobility; gate stack; memory window; optical touch-panel; self-assembled Pt nanocrystals; semiconducting amorphous indium-gallium-zinc oxide; temperature 293 K to 298 K; time 1 ms; voltage 10 V; In-Ga-Zn-O; Pt nanocrystals (NCs); nonvolatile memory; thin-film transistor (TFT); ultraviolet (UV);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2268151
