Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

Author

Xing-Mei Cui ; Sun Chen ; Shi-Jin Ding ; Qing-Qing Sun ; Nyberg, Timo ; Shi-Li Zhang ; Wei Zhang

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1011

Lastpage

1013

Abstract

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al₂O₃/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V_th), subthreshold swing, I_ON/I_OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, ~10⁶, and 8.4 cm²/V·s, respectively. A positive V_th shift of 2.25 V is achieved after 1-ms programming at 10 V, whereas a negative V_th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

Keywords

aluminium compounds; amorphous semiconductors; electron mobility; gallium compounds; indium compounds; platinum; self-assembly; thin film transistors; Al₂O₃-Pt-Al₂O₃; In-Ga-Zn-O TFT memory; InGaZnO; UV-erasable TFT memory; UV-erasable thin-film transistor memory; a-IGZO films; electron mobility; gate stack; memory window; optical touch-panel; self-assembled Pt nanocrystals; semiconducting amorphous indium-gallium-zinc oxide; temperature 293 K to 298 K; time 1 ms; voltage 10 V; In-Ga-Zn-O; Pt nanocrystals (NCs); nonvolatile memory; thin-film transistor (TFT); ultraviolet (UV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2268151

Filename

6553190