Title :
Highly linear efficient HBT MMIC power amplifiers
Author :
Komiak, J.J. ; Yang, L.W.
Author_Institution :
Martin Marietta Labs., Syracuse, NY, USA
Abstract :
The design and performance of Heterojunction Bipolar Transistor MMIC power amplifiers that have demonstrated two-tone CW 1.6 watt and 5 watt power levels, with 35% power-added efficiency, and low intermodulation distortion (29 dBc at 5 dB back-off from 2 dB gain compression), are described. This is the first reported linearity performance on HBT MMIC amplifiers with characteristics comparable to the best reported results for discrete hybrid MESFET, PHEMT, and HBT amplifiers.
Keywords :
MMIC power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit design; intermodulation distortion; 1.6 W; 35 percent; 5 W; HBT; MMIC power amplifiers; intermodulation distortion; linearity performance; power-added efficiency; two-tone CW power levels; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Intermodulation distortion; Linearity; MESFETs; MMICs; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636987
