Title :
IEEE Compound Semiconductor Integrated Circuit Symposium (IEEE Cat. No.05CH37701)
fDate :
Oct. 30 2005-Nov. 2 2005
Abstract :
The following topics are dealt with: 40 Gbit/s fiber blocks; front end MMICs; advanced III-V technologies; high speed data converters; Si technologies for RF applications; GaN technologies; high frequency power amplifiers; low power data communications; signal generation and switching; high voltage GaAs base station technologies; signal amplification and protection.
Keywords :
Ge-Si alloys; III-V semiconductors; MMIC; convertors; data communication equipment; gallium arsenide; gallium compounds; indium compounds; monolithic integrated circuits; optical communication equipment; power amplifiers; silicon; wide band gap semiconductors; 40 Gbit/s; 40 Gbit/s fiber blocks; GaAs; GaN; GaN technologies; InP; RF applications; Si; Si technologies; SiGe; advanced III-V technologies; compound semiconductor integrated circuits; front end MMIC; high frequency power amplifiers; high speed data converters; high voltage GaAs base station technologies; low power data communications; signal amplification; signal generation; signal protection; switching;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Conference_Location :
Palm Springs, CA, USA
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531729
