• DocumentCode
    2404924
  • Title

    Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection

  • Author

    Kamyab, Lobna ; Rusli ; Bin, Yu Ming

  • Author_Institution
    Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    14-16 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiNx:H/SiO2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology.
  • Keywords
    amorphous state; annealing; charge injection; electroluminescence; hydrogen; photoluminescence; quantum wells; silicon compounds; SiNx:H-SiO2; current injection; electrical excitation; electroluminescence; lateral carrier injection; luminescence intensity; multilayer multiquantum well structure; photoluminescence; thermal annealing process; Amorphous silicon; Annealing; Electroluminescence; Nonhomogeneous media; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Global Conference (PGC), 2010
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-9882-6
  • Type

    conf

  • DOI
    10.1109/PGC.2010.5705975
  • Filename
    5705975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2404924