Title :
The flatband potential and the rectification in the system ZnIn2S4-H2O(S2-/S2 2-)
Author :
Tsiulyanu, I. ; Simashkevich, A. ; Sprinchean, Ala ; Lyalikova, Rimma
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn2S 4-electrolyte interface on the concentration of S2- and S22- ions were studied. The current-voltage characteristics of the electrolyte-ZnI2S4 contact are determined by the potential barrier which is formed in the semiconductor near the interface
Keywords :
contact potential; indium compounds; rectification; semiconductor-electrolyte boundaries; ternary semiconductors; zinc compounds; ZnIn2S4; contact potential; current-voltage characteristics; electric properties; electrolyte-semiconductor interface; flatband potential; multinary layered semiconductor; potential barrier; rectification; Current measurement; Current-voltage characteristics; Electric variables measurement; Electrodes; Iron; Orifices; Tin;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733785
