DocumentCode
2404973
Title
Sub-0.2 micron gate lithography using E-beam, X-ray and optical technologies-an overview
Author
Studebaker, L.G.
Author_Institution
Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA
fYear
1994
fDate
16-19 Oct. 1994
Firstpage
321
Lastpage
324
Abstract
The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the "best" technology option for a given application.
Keywords
X-ray lithography; electron beam lithography; field effect transistors; phase shifting masks; photolithography; 0.2 micron; FET gate; GaAs; X-ray steppers; lithography; optical steppers; phase-shift mask; shaped-beam e-beam systems; technology option; Costs; FETs; Gallium arsenide; Gaussian processes; Lithography; Microwave technology; PHEMTs; Prototypes; Resists; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location
Phildelphia, PA, USA
ISSN
1064-7775
Print_ISBN
0-7803-1975-3
Type
conf
DOI
10.1109/GAAS.1994.636993
Filename
636993
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