A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

Author

Biedenbender, M. ; Lai, R. ; Lee, J. ; Chen, S. ; Tan, K.L. ; Liu, P.H. ; Freudenthal, A. ; Streit, D.C. ; Allen, B. ; Wang, H.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

325

Lastpage

328

Abstract

We have developed a W-band HEMT MMIC process which has demonstrated reproducible high performance for both low noise and power amplifier designs. This paper presents the details of the fabrication process as well as device and circuit results from 69 wafers. Three-stage LNAs have demonstrated noise figure as low as 4.4 dB with gains as high as 27 dB from 92 to 96 GHz. The LNA RF lot yield was as high as 78%. The same process has demonstrated power amplifiers with output power of 19 dBm at 94 GHz, with RF yield of 37%.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; integrated circuit technology; integrated circuit yield; millimetre wave amplifiers; millimetre wave power amplifiers; 0.1 micron; 27 dB; 4.4 dB; 92 to 96 GHz; HEMT MMIC process; HEMT production process; RF lot yield; W-band; fabrication process; low noise amplifier; output power; power MMICs; Circuit noise; Fabrication; HEMTs; High power amplifiers; Low-noise amplifiers; MMICs; Power amplifiers; Production; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636994

Filename

636994