DocumentCode
2405010
Title
The future of compound semiconductors for aerospace and defense applications
Author
Streit, Dwight C. ; Gutierrez-Aitken, Augusto ; Wojtowicz, Michael ; Lai, Richard
Author_Institution
Space Technol. Sector, Northrop Grumman Corp., Redondo Beach, CA, USA
fYear
2005
fDate
30 Oct.-2 Nov. 2005
Abstract
We present an overview of the current state of the art and discuss issues associated with competition and the future of compound semiconductor technology, especially for aerospace and defense applications.
Keywords
CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; MMIC; aerospace; aerospace materials; defence industry; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; low noise amplifiers; power amplifiers; wide band gap semiconductors; CMOS RF; GaN; HBT; HEMT; InP; MMIC; Sb; Sb-based semiconductors; SiGe; aerospace applications; compound semiconductors; defense applications; low-noise amplifiers; power amplifiers; Aerospace industry; Gain; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN
0-7803-9250-7
Type
conf
DOI
10.1109/CSICS.2005.1531737
Filename
1531737
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