Device technologies for InP-based HEMTs and their application to ICs

Author

Enoki, T. ; Kobayashi, T. ; Ishii, Y.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

337

Lastpage

340

Abstract

This paper reports device technologies for 0.1-/spl mu/m-gate-InP-based HEMTs developed at our laboratory for ultra-high speed ICs. Key developments include a non-alloyed ohmic contact and a T-shaped gate process for high reproducibility and uniformity. As examples of their application to ICs, a 50 GHz low-noise amplifier with NF of 2.6 dB and a 60-GHz bandwidth distributed baseband amplifier with a flat gain of 9 dB are described. Also discussed is the use of a recess-etch stopper to further improve the reproducibility of the gate recess.

Keywords

HEMT integrated circuits; III-V semiconductors; distributed amplifiers; field effect MIMIC; high electron mobility transistors; indium compounds; millimetre wave amplifiers; ohmic contacts; very high speed integrated circuits; 0.1 micron; 2.6 dB; 50 GHz; 60 GHz; 9 dB; HEMTs; InP; T-shaped gate process; device technologies; distributed baseband amplifier; flat gain; gate recess; low-noise amplifier; millimetre-wave signals; non-alloyed ohmic contact; recess-etch stopper; reproducibility; ultra-high speed ICs; Bandwidth; Baseband; Distributed amplifiers; HEMTs; Laboratories; Low-noise amplifiers; MODFETs; Noise measurement; Ohmic contacts; Reproducibility of results;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636997

Filename

636997