High-speed InP-based Mach-Zehnder modulators for telecom applications

Author

Yasaka, Hiroshi ; Tsuzuki, Ken ; Kikuchi, Nobuhiro ; Yamada, Eiichi ; Shibata, Yasuo ; Ishibashi, Tadao

Author_Institution

NTT Photonics Labs., NIT Corp., Kanagawa, Japan

fYear

2005

fDate

30 Oct.-2 Nov. 2005

Abstract

A novel InP-Based traveling-wave electrode Mach-Zehnder modulator has been proposed and fabricated. It has an n-i-n isotype heterostructure to reduce both electrical signal loss and optical loss caused by p-type cladding layer. We obtained error-free operation for a 40-Gbit/s NRZ signal in a push-pull configuration with a very low driving voltage of 1.3 V_pp. We also confirmed that the modulator has low chirp characteristics by demonstrating a 100-km SMF transmission with a penalty of less than 1.5 dB for a 10-Gbit/s NRZ signal.

Keywords

III-V semiconductors; claddings; electro-optical modulation; indium compounds; modulators; optical communication equipment; optical losses; 10 Gbit/s; 100 km; 40 Gbit/s; InP; Mach-Zehnder modulators; NRZ signal; SMF transmission; electrical signal loss; n-i-n isotype heterostructure; optical loss; p-type cladding layer; push-pull configuration; telecom application; Electrodes; Error-free operation; High speed optical techniques; Low voltage; Optical losses; Optical modulation; Optical signal processing; Phase modulation; Photonics; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE

Print_ISBN

0-7803-9250-7

Type

conf

DOI

10.1109/CSICS.2005.1531745

Filename

1531745