DocumentCode
2405178
Title
Optical absorption of CdGa2S4
Author
Arushanov, E. ; Zhitar, V. ; Knap, W. ; Kulikova, O. ; Kulyuk, L. ; Siminel, A.
Author_Institution
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
507
Abstract
Optical absorption were investigated in CdGa2S4 in the temperature range 85-300 K. The energy gap (3.17 eV at 85 K) and its temperature dependence were determined. The latter was studied by means of a three-parameter thermodynamic model and the Einstein model. Band tail states were found to give rise to the absorption below the fundamental edge
Keywords
cadmium compounds; energy gap; gallium compounds; ternary semiconductors; visible spectra; wide band gap semiconductors; 85 to 300 K; CdGa2S4; Einstein model; band tail states; energy gap; fundamental edge; optical absorption; temperature dependence; thermodynamic model; Absorption; Crystals; Electrons; Energy measurement; Equations; Phonons; Photonic band gap; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733798
Filename
733798
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