• DocumentCode
    2405199
  • Title

    Near-the-edge absorption of A3IIB2 IIIC6VI sulphides

  • Author

    Arama, E.D. ; Zhitar, V.F. ; Radautsan, S.I.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Chisinau, Moldova
  • Volume
    2
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    511
  • Abstract
    The optical absorption spectra of Zn3In2S 6, Zn3InGaS6 and Zn3InAlS 6 monocrystals obtained by iodide transportation have been investigated within the temperature range between 80 K and 300 K. The analysis of the results obtained allow us to conclude that the frequency dependence of the absorption coefficient follows the Urbah law for all the mentioned compounds and that they all are the direct-band semiconductors
  • Keywords
    absorption coefficients; ternary semiconductors; visible spectra; wide band gap semiconductors; zinc compounds; 80 to 300 K; A3IIB2IIIC6 VI sulphide; Urbah law; Zn3In2S6; Zn3InAlS6; Zn3InGaS6; absorption coefficient; direct band semiconductor; iodide transportation; monocrystal; optical absorption spectra; Absorption; Containers; Crystallization; Mirrors; Optical sensors; Photoluminescence; Physics; Temperature distribution; Thickness measurement; Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.733799
  • Filename
    733799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405199