Title :
GaAsSb DHBT IC technology for RF and microwave instrumentation
Author :
Low, T.S. ; Dvorak, M.W. ; Farhoud, M. ; Yeats, R.E. ; Iwamoto, M. ; Essilfie, G.K. ; Engel, T. ; Keppeler, B. ; Chang, J.S.C. ; Hadley, J. ; Patterson, G. ; Kellert, F. ; Moll, N. ; Bahl, S.R. ; Hutchinson, C.P. ; Ehlers, E. ; Adamski, M.E. ; Culver, M.K
Author_Institution :
Agilent Techologies, Santa Rosa, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves fT and fmax values of 185 GHz and 220 GHz respectively, at operating currents of Jc= 1.5 mA/μm2, with catastrophic on-state breakdown voltages of BVcbx = 9 V at Jc= 1.3 mA/μm2. Typical β= 50. The MTTF values of > 1 × 106 h at maximum operating conditions (Tj = 125 °C, Jc = 2.0 mA/μm2) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.
Keywords :
III-V semiconductors; arsenic compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave integrated circuits; millimetre wave integrated circuits; 125 C; 185 GHz; 220 GHz; 9 V; DHBT IC process; GaAsSb; GaAsSb DHBT IC technology; InP; MIM capacitor; RF instrumentation; breakdown voltages; metal chassis; microwave instrumentation; resistor levels; telecommunications instrumentation; Indium phosphide; Instruments; MIM capacitors; Manufacturing; Microwave integrated circuits; Microwave technology; Production; Radio frequency; Radiofrequency integrated circuits; Resistors;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531760
