• DocumentCode
    2405497
  • Title

    Dry etching of LiNbO3 using inductively coupled plasma

  • Author

    Deng, Jun ; Si, Guangyuan ; Danner, Aaron J.

  • Author_Institution
    Dept. of ECE, Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2010
  • fDate
    14-16 Dec. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.
  • Keywords
    lithium compounds; optical fabrication; optical materials; optical waveguides; ridge waveguides; sputter etching; surface roughness; LiNbO3; X-cut proton exchange; dry etching; etching gases; etching masks; fluorine gases; inductively coupled plasma etching; ridge waveguide fabrication; surface smoothness; Argon; Etching; Optical waveguides; Rough surfaces; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Global Conference (PGC), 2010
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-9882-6
  • Type

    conf

  • DOI
    10.1109/PGC.2010.5706006
  • Filename
    5706006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405497