Title :
A low phase noise InGaP-GaAs HBT transformer power combining VCO
Author :
Lai, Ping Wing ; Long, Stephen I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
A transformer-based power combining technique is shown to be an efficient method for reducing oscillator phase noise. Higher signal power can be achieved while avoiding breakdown without penalty in tuning range. An InGaP-GaAs HBT process was used to fabricate the 1GHz VCO. The measured phase noise at 100 KHz, 1 MHz and 3 MHz offset frequency is -116, -136 and -145dBc/Hz respectively. The VCO dissipates 3mW.
Keywords :
III-V semiconductors; UHF oscillators; bipolar analogue integrated circuits; bipolar transistor circuits; gallium arsenide; gallium compounds; indium compounds; phase noise; power combiners; transformers; voltage-controlled oscillators; 1 GHz; 1 MHz; 100 kHz; 3 MHz; 3 mW; HBT transformers; InGaP-GaAs; low phase noise; oscillator phase noise; power combining VCO; Breakdown voltage; Circuit faults; Equations; Heterojunction bipolar transistors; Noise level; Noise measurement; Phase measurement; Phase noise; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531766
