DocumentCode
2405540
Title
Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits
Author
Badila, M. ; Codreanu, Cecilia ; Brezeanu, G. ; Marinescu, B. ; Stoica, A.M.
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
2
fYear
1998
fDate
6-10 Oct 1998
Firstpage
583
Abstract
A new high performance technology (with low parasitic elements) for high frequency bipolar circuits is proposed. The new technologies upgrade a classical “LISA” (local implantation self aligned) technology using a 14 masks process. The demonstrator circuits are a “Gilbert” cell, and some broad band high frequency amplifiers
Keywords
HF amplifiers; bipolar analogue integrated circuits; integrated circuit metallisation; ion implantation; wideband amplifiers; Gilbert cell; LISA technology; broadband amplifier; high frequency bipolar integrated circuit; local implantation self-aligned technology; parasitic element; self-aligned contact; Bipolar integrated circuits; Etching; Frequency; Insulation; Integrated circuit technology; Marine technology; Production; Research and development; Silicon compounds; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.733817
Filename
733817
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