Title :
Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits
Author :
Badila, M. ; Codreanu, Cecilia ; Brezeanu, G. ; Marinescu, B. ; Stoica, A.M.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
A new high performance technology (with low parasitic elements) for high frequency bipolar circuits is proposed. The new technologies upgrade a classical “LISA” (local implantation self aligned) technology using a 14 masks process. The demonstrator circuits are a “Gilbert” cell, and some broad band high frequency amplifiers
Keywords :
HF amplifiers; bipolar analogue integrated circuits; integrated circuit metallisation; ion implantation; wideband amplifiers; Gilbert cell; LISA technology; broadband amplifier; high frequency bipolar integrated circuit; local implantation self-aligned technology; parasitic element; self-aligned contact; Bipolar integrated circuits; Etching; Frequency; Insulation; Integrated circuit technology; Marine technology; Production; Research and development; Silicon compounds; Space technology;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.733817
