Title :
Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5μm ED PHEMT and a new circuit topology
Author :
Kobayashi, Kevin W.
Author_Institution :
Sirenza Microdevices, Torrance, CA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper reports on the first results of a self-biased e-mode PHEMT Darlington amplifier. The e-mode PHEMTs enable a FET Darlington implementation while a new Darlington active bias topology reduces bias variation over temperature and supply, and improves overall efficiency by reducing supply operation. A 3.3V-75mA amplifier achieves a BW of 0.1-14GHz, 12.3dB gain, NF of 3.5dB, IP3 and P1dB of 33.1dBm and 16dBm @ 2GHz, respectively. A 5V-75mA amplifier achieves a 0.1-10 GHz BW, 20.2 dB gain, NF of 2.9 dB, IP3 and P1dB of 34.2dBm and 21.8dBm @ 2 GHz, respectively. The new PHEMT Darlington amplifier design enables a factor of 2 better IP3-bandwidth product and lower voltage operation capability compared to InGaP-based Darlington amplifiers.
Keywords :
HEMT circuits; III-V semiconductors; UHF amplifiers; bipolar transistor circuits; gallium compounds; indium compounds; microwave amplifiers; wideband amplifiers; 0.1 to 14 GHz; 0.5 micron; 12.3 dB; 2 GHz; 2.9 dB; 20.2 dB; 3.3 V; 3.5 dB; 5 V; 75 mA; Darlington active bias topology; IP3-bandwidth; InGaP; bias variation reduction; microwave Darlington amplifier; self-biased e-mode PHEMT Darlington amplifier; Circuit topology; Gain; Microwave FETs; Microwave amplifiers; Noise measurement; Operational amplifiers; PHEMTs; Robustness; Temperature; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531769
