Title :
A 5-bit, 18 GS/sec SiGe HBT track-and-hold amplifier
Author :
Li, Xiangtao ; Kuo, Wei-Min Lance ; Lu, Yuan ; Krithivasan, Ramkumar ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
30 Oct.-2 Nov. 2005
Abstract :
An ultra-high-speed track-and-hold amplifier (THA) using a switched-emitter-follower (SEF) configuration is presented. Implemented in a commercially-available 0.18 μm 120 GHz SiGe HBT BiCMOS technology, the THA core occupies a compact area of only 120 × 200 μm2. The THA can operate at a sampling rate of 18 GS/sec with a total harmonic distortion (THD) of -32.3 dBc, and dissipates 128 mW, significantly smaller than other THAs in the literature operating at similar sampling rates.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit layout; millimetre wave amplifiers; sample and hold circuits; 0.18 micron; 120 GHz; 120 micron; 128 mW; 200 micron; HBT BiCMOS technology; SiGe; switched emitter follower configuration; track-and-hold amplifier; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Millimeter wave technology; Millimeter wave transistors; Sampling methods; Silicon germanium; Space technology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531774
