Title :
60 GHz circuits in SiGe HBT technology
Author :
Winkler, Wolfgang
Author_Institution :
IHP, Frankfurt, Germany
fDate :
30 Oct.-2 Nov. 2005
Abstract :
This paper addresses systems, technology and circuit aspects for the design of high-data-rate low-cost transceivers in the 60 GHz unlicensed band. For realizing such a transceiver, two different modulation schemes are under consideration, ASK and OFDM. For demonstration of a 60 GHz analog frontend, an appropriate SiGe:C BiCMOS technology is proposed. Several circuit building blocks for 60 GHz analog frontends are described in the paper.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; OFDM modulation; amplitude shift keying; bipolar transistor circuits; heterojunction bipolar transistors; millimetre wave circuits; transceivers; 60 GHz; ASK; BiCMOS technology; HBT technology; OFDM; SiGe:C; analog frontend; transceivers; Amplitude shift keying; Bandwidth; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; OFDM modulation; Oscillators; Silicon germanium; Transceivers;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
Print_ISBN :
0-7803-9250-7
DOI :
10.1109/CSICS.2005.1531777
