• DocumentCode
    2405694
  • Title

    The role of doping profile on power gain of SiGe HBTs under constant Ge strain

  • Author

    Jiang, Ningyue ; Ma, Zhenqiang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI, USA
  • fYear
    2005
  • fDate
    30 Oct.-2 Nov. 2005
  • Abstract
    The power gain characteristics of SiGe HBTs with constant total Ge strain in the base region, but different doping profiles, are studied. It is found that the doping profile is the dominant factor in determining fmax and high-frequency power gain, while Ge profile only plays an insignificant role. In addition, CE and CB configurations show distinct characteristics of power gain sensitivity on base doping profiles and DC bias.
  • Keywords
    Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor doping; DC bias; SiGe; doping profile; heterojunction bipolar transistors; microwave power amplifiers; power gain sensitivity; BiCMOS integrated circuits; Capacitive sensors; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Microwave amplifiers; Power amplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE
  • Print_ISBN
    0-7803-9250-7
  • Type

    conf

  • DOI
    10.1109/CSICS.2005.1531778
  • Filename
    1531778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2405694