Title :
Self-aligned ground-plane FDSOI MOSFET
Author :
Xiong, W. ; Ramkumar, K. ; Jang, S.J. ; Park, J.T. ; Colinge, J.P.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
We report the fabrication and the electrical characteristics of fully depleted n-channel SOI MOSFETs with a self-aligned ground-plane electrode in the silicon mechanical substrate underneath the buried oxide. The ground-plane electrode is shown to reduce short-channel effects.
Keywords :
MOSFET; semiconductor device measurement; silicon-on-insulator; electrical characteristics; fabrication; fully depleted n-channel SOI MOSFETs; self-aligned ground-plane FDSOI MOSFET; self-aligned ground-plane electrode; short-channel effects; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.2002.1044401
