A new structure for in-depth history effect characterization on partially depleted SOI transistors

As partially depleted SOI technology becomes very attractive for ULSI CMOS, an in-depth characterization of floating body (FB) effects is required, especially for circuit design. One of the most important FB effects is the history effect, i.e. the propagation delay variation versus time. Many publications have shown experimental and simulation analysis of those effects. Most of the time, the experimental analysis of the history effect is done through chains, from which the propagation delay is extracted. In this paper, we propose a new structure that enables us to do an in-depth characterization of history effect, distinguishing between pull-up and pull-down delays for the first and second switches.